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(R)
BUW48 BUW49
HIGH POWER NPN SILICON TRANSISTORS
s
s s s s
STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN
3 2 1
APPLICATION SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS
s
TO-218
DESCRIPTION The BUW48 and BUW49 are Multi-Epitaxial Planar NPN transistor in TO-218 plastic package. They are intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter BUW48 Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 45 8 12 150 -65 to 175 175 120 60 7 30 40 6 10 Value BUW49 160 80 V V V A A A A W
o o
Unit
C C
October 2003
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BUW48 BUW49
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I EBO Parameter Collector Cut-off Current (V BE = -1.5V Emitter Cut-off Current (I C = 0)
VCE
Test Conditions V CE = V CEX = V CEX T C =125 o C
Min.
Typ.
Max. 1 3 1
Unit mA mA mA V V V
V EB = 5 V I C = 0.2A L = 25 mH for BUW48 for BUW49 60 80 7 IB IB IB IB = = = = 2A 4A 1.5A 3A for for for for BUW48 BUW48 BUW49 BUW49
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage
I E = 50 mA IC IC IC IC = = = = 20A 40A 15A 30A
0.6 1.4 0.5 1.2 2.1 2 8
V V V V V V MHz
V BE(sat) fT
Base-Emitter Saturation Voltage Transition Frequency
I C = 40A I C = 30A I C = 1A
I B = 4A I B = 3A V CE = 15V
for BUW48 for BUW49 f = 15 MHz
RESISTIVE LOAD
Symbol t on ts tf ts tf t on ts tf ts tf Parameter Turn-on Time Storage Time Fall Time Storage Time Fall Time Turn-on Time Storage Time Fall Time Storage Time Fall Time Test Conditions for BUW48 V CC = 60V I B1 = -IB2 = 4A for BUW48 V CC = 60V I B1 = -IB2 = 4A for BUW49 V CC = 80V I B1 = -IB2 = 4A for BUW49 V CC = 80V I B1 = -IB2 = 4 I C = 40A Min. Typ. 1.2 0.6 0.17 Max. 1.5 1.1 0.25 1.65 0.5 0.8 0.6 0.15 1.2 1.1 0.25 1.65 0.5 Unit s s s s s s s s s s
I C = 40A T C =100 o C I C = 30A
I C = 30A T C =100 o C
Pulsed: Pulse duration = 300 s, duty cycle < 1.5 %
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BUW48 BUW49
TO-218 (SOT-93) MECHANICAL DATA
mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054
DIM.
A
C
L5 L3 L2
L6
D
E H
F
R
123
P025A
G
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BUW48 BUW49
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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